3D-transistor array based on horizontally suspended silicon nano-bridges grown via a bottom-up technique.
نویسندگان
چکیده
Integrated surround-gate field-effect-transistors enabled by bottom-up synthesis of nano-bridges are demonstrated. Horizontally oriented silicon nano-bridge devices are fabricated avoiding the rigorous processes for aligning and contacting nanowires grown via a bottom-up technique. Evaluation of electrical properties and a memory device application of the transistors are presented.
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ورودعنوان ژورنال:
- Advanced materials
دوره 26 12 شماره
صفحات -
تاریخ انتشار 2014